2SC1173资料

The 2SC1173 is Silicon NPN Power Transistors

DESCRIPTION
·With TO-220 package
·Complement to type 2SA473
·Collector current :IC=3A
·Collector dissipation:PC=10W@TC=25?
APPLICATIONS
·Low frequency power amplifier
·Power regulator

2SC1173三极管引脚图管脚图

PINNING
PIN DESCRIPTION
1 Base
2 Collector;connected to
mounting base
3 Emitter

Absolute maximum ratings (Ta=25? )
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 30 V
VCEO Collector-emitter voltage Open base 30 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current (DC) 3 A
PC Collector power dissipation TC=25? 10 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?

CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V
V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0 30 V
V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A 0.8 V
VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V
ICBO Collector cut-off current VCB=20V;IE=0 1.0 μ A
IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μ A
hFE-1 DC current gain IC=0.5A ; VCE=2V 70 240
hFE-2 DC current gain IC=2.5A ; VCE=2V 25
COB Output capacitance IE=0; VCB=10V;f=1MHz 35 pF
fT Transition frequency IC=0.5A ; VCE=2V 100 MHz

u hFE-1 classifications
O Y
70-140 120-240